| PART |
Description |
Maker |
| 2N7000 |
DMOS Transistors (N-Channel)
|
http://
GE[General Semiconductor]
|
| BS209 |
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE Security, Inc.
General Semiconductor
|
| BS208 |
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE Security, Inc.
General Semiconductor
|
| BS109 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
GE Security, Inc.
GE[General Semiconductor]
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| 2N2535N5 2N2535N3 2N2540N3 2N2540N5 2N2540N8 DN253 |
350V N-channel depletion - Mode vertical DMOS FET
400V N-channel depletion - Mode vertical DMOS FET
N-Channel Depletion-Mode Vertical DMOS FETs
|
Supertex Inc
|
| ZVN0120L ZVN0120 ZVN0120A ZVN0120B |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET
N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
ZETEX[Zetex Semiconductors]
|
| IRF460 IRF460NBSP IRF460PBF |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
HEXFET?TRANSISTORS 500V, N-CHANNEL
N-Channel Enhancement MOSFET
From old datasheet system
TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
|
IRF[International Rectifier]
|
| CPC3703CTR CPC3703 CPC3703C |
N-Channel Depletion-Mode Vertical DMOS FETs
0.36 A, 250 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Clare, Inc.
CLARE INC
|
